ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 dme 500 500 watts, 50 volts, pulsed avionics 1025 - 1150 mhz general description the dme 500 is a high power common base bipolar transistor. it is designed for pulsed systems in the frequency band 1025-1150 mhz. the device has gold thin-film metallization for proven highest mttf. the transistor includes input and output prematch for broadband capability. low thermal resistance package reduces junction temperature, extends life. case outline 55kt, style 1 absolute maximum ratings maximum power dissipation @ 25 c 1700 watts o2 maximum voltage and current bvces collector to base voltage 55 volts bvebo emitter to base voltage 3.5 volts ic collector current 40 amps maximum temperatures storage temperature - 65 to + 200 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power out power input power gain collector efficiency load mismatch tolerance f = 1025-1150 mhz vcc = 50 volts pw = 10 m sec df = 1% f = 1090 mhz 500 6.0 6.5 35 125 10:1 watts watts db % bvebo bvces h fe q jc 2 emitter to base breakdown collector to emitter breakdown dc - current gain thermal resistance ie = 30 ma ic = 40 ma ic = 500 ma, vce = 5 v 3.5 55 10 100 0.1 volts volts c/w o note 1: at rated output power and pulse conditions 2: at rated pulse conditions initial issue june, 1994
dme 500
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